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FDG1024NZ - N-Channel MOSFET

General Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

Key Features

  • Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A.
  • Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A.
  • Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A.
  • Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A.
  • HBM ESD protection level >2 kV (Note 3).
  • Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V).
  • Very small package outline SC70-6.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG1024NZ Dual N-Channel Power Trench® MOSFET August 2009 FDG1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ Features „ Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A „ Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A „ Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A „ Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A „ HBM ESD protection level >2 kV (Note 3) „ Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V) „ Very small package outline SC70-6 „ RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.