FDG1024NZ - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDG1024NZ
Manufacturer	Fairchild Semiconductor
File Size	337.70 KB
Description	N-Channel MOSFET
Datasheet	FDG1024NZ Datasheet
Additional preview pages of the FDG1024NZ datasheet.

Product details

Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Features

Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A.
Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A.
Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A.
Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A.
HBM ESD protection level >2 kV (Note 3).
Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V).
Very small package outline SC70-6.
RoHS Compliant General.

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Published: Oct 14, 2009 |