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FDG1024NZ Datasheet, ON Semiconductor

FDG1024NZ mosfet equivalent, dual n-channel mosfet.

FDG1024NZ Avg. rating / M : 1.0 rating-16

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FDG1024NZ Datasheet

Features and benefits


* Max rDS(on) = 175 mW at VGS = 4.5 V, ID = 1.2 A
* Max rDS(on) = 215 mW at VGS = 2.5 V, ID = 1.0 A
* Max rDS(on) = 270 mW at VGS = 1.8 V, ID = 0.9 A
* Ma.

Application

as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this d.

Description

This dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device .

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TAGS

FDG1024NZ
Dual
N-Channel
MOSFET
FDG122032A
FDG122032C
FDG122032D
ON Semiconductor

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