These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
Key Features
Q1: N-Channel.
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel.
Max rDS(on) = 1.1Ω at VGS =.
4.5V, ID =.
0.41A.
Max rDS(on) = 1.5Ω at VGS =.
2.7V, ID =.
0.25A.
Very low level gate drive requirements allowing direct
operation in 3V circuits(VGS(th).
Full PDF Text Transcription for FDG8842CZ (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
FDG8842CZ. For precise diagrams, and layout, please refer to the original PDF.
FDG8842CZ Complementary PowerTrench® MOSFET FDG8842CZ Complementary PowerTrench® MOSFET April 2007 tm Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features Q1: N-Channel Max ...
View more extracted text
m Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features Q1: N-Channel Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 General Description These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored
FDG8842CZ Datasheet
