FDG8842CZ - MOSFET

Fairchild Semiconductor

FDG8842CZ Datasheet Preview — Preview of FDG8842CZ PDF

Datasheet Details

Part number	FDG8842CZ
Manufacturer	Fairchild ↗ Semiconductor
File Size	455.63 KB
Description	MOSFET
Datasheet	FDG8842CZ-FairchildSemiconductor.pdf

FDG8842CZ Product details

Description

These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

Features

Q1: N-Channel.
Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Q2: P-Channel.
Max rDS(on) = 1.1Ω at VGS =.
4.5V, ID =.
0.41A.
Max rDS(on) = 1.5Ω at VGS =.
2.7V, ID =.
0.25A.
Very low level gate drive requirements allowing direct operation in 3V circuits(VGS(th).

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Published: Jan 11, 2017 |