FDG8850NZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
* Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
* Very low level gate drive requirements allowing operation in 3.

Application

as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this d.

Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This devi.

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