FDG8850NZ Datasheet PDF - Fairchild Semiconductor MOSFET Specs

FDG8850NZ - MOSFET

Datasheet Summary

Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

Features

Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A.
Very low level gate drive requirements allowing operation in 3V circuits(VGS(th).

Datasheet Details

Part number	FDG8850NZ
Manufacturer	Fairchild Semiconductor
File Size	327.66 KB
Description	MOSFET
Datasheet	FDG8850NZ Datasheet
Additional preview pages of the FDG8850NZ datasheet.

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Full PDF Text Transcription

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FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.4Ω Features Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A Very low level gate drive requirements allowing operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

Published: Jan 11, 2017 |