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FDG8850NZ - MOSFET

General Description

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

Key Features

  • Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A.
  • Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A.
  • Very low level gate drive requirements allowing operation in 3V circuits(VGS(th).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG8850NZ Dual N-Channel PowerTrench® MOSFET April 2007 FDG8850NZ Dual N-Channel PowerTrench® MOSFET tm 30V,0.75A,0.4Ω Features „ Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A „ Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A „ Very low level gate drive requirements allowing operation in 3V circuits(VGS(th) <1.5V) „ Very small package outline SC70-6 „ RoHS Compliant General Description This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.