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FDG315N Datasheet, ON Semiconductor

FDG315N mosfet equivalent, n-channel mosfet.

FDG315N Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 298.57KB)

FDG315N Datasheet

Features and benefits


* 2 A, 30 V
* RDS(ON) = 0.12 W @ VGS = 10 V
* RDS(ON) = 0.16 W @ VGS = 4.5 V
* Low Gate Charge (2.1 nC Typical)
* High Performance Trench Technology f.

Application

where low in−line power loss and fast switching are required. Features
* 2 A, 30 V
* RDS(ON) = 0.12 W @ VGS = 10.

Description

This N−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for l.

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TAGS

FDG315N
N-Channel
MOSFET
ON Semiconductor

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