FDG315N mosfet equivalent, n-channel mosfet.
* 2 A, 30 V
* RDS(ON) = 0.12 W @ VGS = 10 V
* RDS(ON) = 0.16 W @ VGS = 4.5 V
* Low Gate Charge (2.1 nC Typical)
* High Performance Trench Technology f.
where low in−line power loss and fast switching are required.
Features
* 2 A, 30 V
* RDS(ON) = 0.12 W @ VGS = 10.
This N−Channel Logic Level MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices are well suited for l.
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