| Part number | FDG313N |
|---|---|
| Datasheet | FDG313N_FairchildSemiconductor.pdf |
| File Size | 713.24 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | N-Channel Digital FET |
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This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
FDG313N | N-Channel Digital FET | ON Semiconductor |
See all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
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| FDG328P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDG329N | 20V N-Channel PowerTrench MOSFET |
