FDG313N
Description
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
Key Features
- 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V. * * *
- Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package.
