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FDG313N Datasheet, ON Semiconductor

FDG313N fet equivalent, n-channel digital fet.

FDG313N Avg. rating / M : 1.0 rating-12

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FDG313N Datasheet

Features and benefits


* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
* Low gate charge (1.64 nC typical)
* Very low level gate drive requirements al.

Application

as a replacement for bipolar digital transistor and small signal MOSFET. Applications
* Load switch
* Battery pr.

Description

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe.

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TAGS

FDG313N
N-Channel
Digital
FET
ON Semiconductor

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