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FDG313N - N-Channel Digital FET

Description

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

Features

  • 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V.
  • Low gate charge (1.64 nC typical).
  • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V).
  • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
  • Compact industry standard SC70-6 surface mount package. S D 1 D 2 G pin 1 SC70-6 D D 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS.

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Datasheet Details

Part number FDG313N
Manufacturer onsemi
File Size 171.37 KB
Description N-Channel Digital FET
Datasheet download datasheet FDG313N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDG313N FDG313N Digital FET, N-Channel General Description This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET. Applications • Load switch • Battery protection • Power management Features • 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V. • Low gate charge (1.64 nC typical) • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
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