FDG313N fet equivalent, n-channel digital fet.
* 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V
RDS(on) = 0.60 Ω @ VGS = 2.7 V.
* Low gate charge (1.64 nC typical)
* Very low level gate drive requirements al.
as a replacement for bipolar digital transistor and small signal MOSFET.
Applications
* Load switch
* Battery pr.
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designe.
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