FDG312P
FDG312P is P-Channel MOSFET manufactured by onsemi.
Description
Features
This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Applications
- Load switch
- Battery protection
- Power management
- -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V
RDS(on) = 0.25 Ω @ VGS = -2.5 V.
- Low gate charge (3.3 n C typical).
- High performance trench technology for extremely low RDS(ON).
- pact industry standard SC70-6 surface mount package.
SC70-6
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation for Single Operation
(Note 1)
(Note 1a) (Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.12
7’’
Ratings
-20 ±8 -1.2 -6 0.75 0.55 0.48 -55 to...
