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FDG312P
FDG312P
P-Channel 2.5V Specified PowerTrench™ MOSFET
General Description
Features
This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Applications • Load switch • Battery protection • Power management
• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V
RDS(on) = 0.25 Ω @ VGS = -2.5 V.
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely
low RDS(ON).
• Compact industry standard SC70-6 surface mount
package.
FDG312P Datasheet
