FDD5670 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS = 6 V
* Low gate charge
* Fast switching
* High performance trench technology for ext.

Application

* DC/DC converter
* Motor drives Features
* 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching .

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