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FDD5670 - 60V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

  • 48 A, 60 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.018 Ω @ VGS = 6 V.
  • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD Drain-Source Voltage TC=25oC unless otherwise noted Parameter Ratings 60 ±20 Units V V A -Continuous -Pulsed (Note 1) (Note 1a) 48 10 100 70 2.

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Datasheet Details

Part number FDD5670
Manufacturer Fairchild Semiconductor
File Size 106.69 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet FDD5670 Datasheet
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Full PDF Text Transcription

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FDD5670 March 1999 ADVANCE INFORMATION FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 48 A, 60 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.018 Ω @ VGS = 6 V. • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON).
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