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Fairchild Semiconductor Electronic Components Datasheet

FDD5670 Datasheet

60V N-Channel PowerTrenchTM MOSFET

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March 1999
ADVANCE INFORMATION
FDD5670
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
48 A, 60 V. RDS(ON) = 0.015 @ VGS = 10 V
RDS(ON) = 0.018 @ VGS = 6 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low RDS(ON).
D
D
G
S
TO-252
G
S
Absolute Maximum Ratings TC=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25oC
TA = 25oC
TA = 25oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC Thermal Resistance, Junction-to- Case
RθJA Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5670
FDD5670
13’’
©1999 Fairchild Semiconductor Corporation
Ratings
60
±20
48
10
100
70
2.8
1.3
-55 to +150
1.8
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD5670 Rev. A


Fairchild Semiconductor Electronic Components Datasheet

FDD5670 Datasheet

60V N-Channel PowerTrenchTM MOSFET

No Preview Available !

Electrical Characteristics TC=25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
VDS = 48 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
60
1
100
-100
ON CHARACTERISTICS (Note 2)
VGS(TH)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10 A
VGS = 6 V, ID = 9 A
24
0.015
0.018
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward VGS = 0 V, IS = 2.4 A
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
48
1.2
V
µA
nA
nA
V
A
V
a) RθJA= 45oC/W when mounted on
a 1 in2 pad of 2oz copper.
b) RθJA= 96oC/W when mounted on
a 0.076 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
FDD5670 Rev. A


Part Number FDD5670
Description 60V N-Channel PowerTrenchTM MOSFET
Maker Fairchild Semiconductor
Total Page 5 Pages
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