FDD5612 Datasheet | onsemi

Description This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features - 18 A, 60 V - RDS(ON) = 55 m W @ VGS = 10 V - RDS(ON) = 64 m W @ VGS = 6 V - Optimized for Use in High Frequency DC/DC Converters - Low Gade Charge - Very Fast Switching - This Device is Pb- Free and are Ro HS pliant .onsemi. D DPAK3 (TO- 252 3 LD) CASE 369AS MARKING DIAGRAM $Y&Z&3&K FDD 5612 $Y &Z &3 &K FDD5612 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2001 January, 2021 - Rev. 4 Publication Order Number: FDD5612/D ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted) Symbol Parameter Ratings Units VDSS VGSS Drain- Source Voltage Gate- Source Voltage Drain Current - Continuous Drain Current - Pulsed TC = 25°C TC = 100°C TA = 25°C (Note 1a) TA = 25°C (Note...