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FDD5612 - 60V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power supply designs with higher overall efficiency. Features • 19 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @ VGS = 6 V. • Optimized for use in • • Low gate charge. Very fast switching. high frequency DC/DC converters.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD5612 July 1999 ADVANCE INFORMATION FDD5612 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power supply designs with higher overall efficiency. Features • 19 A, 60 V. RDS(ON) = 0.055 Ω @ VGS = 10 V RDS(ON) = 0.064 Ω @ VGS = 6 V. • Optimized for use in • • Low gate charge. Very fast switching. high frequency DC/DC converters.