FDD5614P mosfet equivalent, p-channel mosfet.
* −15 A, −60 V
* RDS(ON) = 100 mW at VGS = −10 V
* RDS(ON) = 130 mW at VGS = −4.5 V
* Fast Switching Speed
* High Performance Trench Technology for Ex.
Features
* −15 A, −60 V
* RDS(ON) = 100 mW at VGS = −10 V
* RDS(ON) = 130 mW at VGS = −4.5 V
* Fast Swi.
This 60 V P−Channel MOSFET uses onsemi’s high voltage
POWERTRENCH process. It has been optimized for power management applications.
Features
* −15 A, −60 V
* RDS(ON) = 100 mW at VGS = −10 V
* RDS(ON) = 130 mW at VGS = −4.5 V
* Fast Sw.
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