FDC3512 mosfet equivalent, n-channel mosfet.
* 3.0 A, 80 V
* RDS(ON) = 77 mW @ VGS = 10 V
* RDS(ON) = 88 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate C.
* DC/DC Converter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VD.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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