FDC3512 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 3.0 A, 80 V
* RDS(ON) = 77 mW @ VGS = 10 V
* RDS(ON) = 88 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate C.

Application

* DC/DC Converter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VD.

Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

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