* 3.0 A, 80 V
* RDS(ON) = 77 mW @ VGS = 10 V
* RDS(ON) = 88 mW @ VGS = 6 V
* High Performance Trench Technology for Extremely Low RDS(ON)
* Low Gate C.

* DC/DC Converter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VD.

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts