Description
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V.
- Low gate charge (3.7nC typical).
- Fast switching speed.
- High performance trench technology for extremely
low R DS(ON).
- SuperSOTTM-6 package: small footprint 72%
(smaller than standard SO-8); low profile (1mm thick). D2 S1 D1
4 5
G2
3 2 1
SuperSOT TM -6
S2 G1
6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
FDC3601N Datasheet
