FDC3601N Overview
These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8...
FDC3601N Key Features
- 1.0 A, 100 V
- Low gate charge (3.7nC typical)
- Fast switching speed
- High performance trench technology for extremely
- SuperSOTTM-6 package: small footprint 72%
