FDC3601N datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
* Low Gate Charge (3.7 nC Typical)
* Fast Switching Speed
* High Performance Tre.

Application

where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features
* 1.0 A, 100 V RDS(ON) = 500 W @.

Description

These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have.

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