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FDC3601N - Dual N-Channel MOSFET

Description

These N Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain low gate charge for superior switching performance.

Features

  • 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V.
  • Low Gate Charge (3.7 nC Typical).
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • SUPERSOTt.
  • 6 Package: Small Footprint 72% (Smaller than Standard SO.
  • 8); Low Profile (1 mm Thick).
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number FDC3601N
Manufacturer onsemi
File Size 328.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDC3601N Datasheet

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Full PDF Text Transcription

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MOSFET – Dual, N-Channel, POWERTRENCH) 100 V Specified FDC3601N General Description These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V • Low Gate Charge (3.
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