Datasheet4U Logo Datasheet4U.com

FDC3601N Dual N-Channel MOSFET

FDC3601N Description

MOSFET * Dual, N-Channel, POWERTRENCH) 100 V Specified FDC3601N General .
These N. Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize.

FDC3601N Features

* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
* Low Gate Charge (3.7 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* SUPERSOTt
* 6 Package: Small Footprint 72% (Smaller than

FDC3601N Applications

* where the bigger more expensive SO
* 8 and TSSOP

📥 Download Datasheet

Preview of FDC3601N PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDC3612 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDC3616N - N-Channel MOSFET (Fairchild Semiconductor)
  • FDC365P - P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDC3400 - Floppy Disk Hard Sector Data Handler (SMSC)
  • FDC3512 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDC37B72X - 128 Pin Enhanced Super I/O Controller (SMSC Corporation)
  • FDC37B77X - ENHANCED SUPER I/O CONTROLLER (SMSC Corporation)
  • FDC37B787 - Super I/O Controller (SMSC Corporation)

📌 All Tags

Dual N-Channel MOSFET ON Semiconductor
ON Semiconductor FDC3601N-like datasheet