Datasheet Summary
MOSFET
- Dual, N-Channel, POWERTRENCH)
100 V Specified
General Description These N- Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO- 8 and TSSOP- 8 packages are impractical.
Features
- 1.0 A, 100 V
RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
- Low Gate Charge (3.7 nC Typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely...
