logo

FDC3601N Datasheet, ON Semiconductor

FDC3601N mosfet equivalent, dual n-channel mosfet.

FDC3601N Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 328.55KB)

FDC3601N Datasheet

Features and benefits


* 1.0 A, 100 V RDS(ON) = 500 W @ VGS = 10 V RDS(ON) = 550 W @ VGS = 6.0 V
* Low Gate Charge (3.7 nC Typical)
* Fast Switching Speed
* High Performance Tre.

Application

where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features
* 1.0 A, 100 V RDS(ON) = 500 W @.

Description

These N−Channel 100 V specified MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. These devices have.

Image gallery

FDC3601N Page 1 FDC3601N Page 2 FDC3601N Page 3

TAGS

FDC3601N
Dual
N-Channel
MOSFET
ON Semiconductor

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts