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FDC3612 - N-Channel MOSFET

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

  • 2.6 A, 100 V RDS(ON) = 125 mW @ VGS = 10 V RDS(ON) = 135 mW @ VGS = 6 V.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Low Gate Charge (14 nC Typical).
  • High Power and Current Handling Capability.
  • Fast Switching Speed.
  • This is a Pb.
  • Free Device.

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Datasheet preview – FDC3612

Datasheet Details

Part number FDC3612
Manufacturer ON Semiconductor
File Size 320.06 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC3612 Datasheet
Additional preview pages of the FDC3612 datasheet.

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Full PDF Text Transcription

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MOSFET – N-Channel, POWERTRENCH) 100 V FDC3612 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 2.
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