FDC3612
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
- 2.6 A, 100 V RDS(ON) = 125 mW @ VGS = 10 V RDS(ON) = 135 mW @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (14 nC Typical)
- High Power and Current Handling Capability
- Fast Switching Speed
- This is a Pb-Free Device
