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FDC3535 - P-Channel MOSFET

Description

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast sw

Features

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Datasheet preview – FDC3535

Datasheet Details

Part number FDC3535
Manufacturer ON Semiconductor
File Size 272.52 KB
Description P-Channel MOSFET
Datasheet download datasheet FDC3535 Datasheet
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Full PDF Text Transcription

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FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A „ Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
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