Datasheet Details
| Part number | FDC3535 |
|---|---|
| Manufacturer | onsemi |
| File Size | 272.52 KB |
| Description | P-Channel MOSFET |
| Download | FDC3535 Download (PDF) |
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Overview: FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.
| Part number | FDC3535 |
|---|---|
| Manufacturer | onsemi |
| File Size | 272.52 KB |
| Description | P-Channel MOSFET |
| Download | FDC3535 Download (PDF) |
|
|
|
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications Load Switch Synchronous Rectifier S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings -80 ±20 -2.1 -10 37 1.6 0.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 30 (Note 1a) 78 °C/W Device Marking .535 Device FDC3535 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2010 Semiconductor Components Industries, LLC.
1 October-2017, Rev.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FDC3535 | P-Channel MOSFET | Fairchild Semiconductor |
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