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FDC3535 - P-Channel MOSFET

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FDC3535 Product details

Description

Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A. Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A. High performance trench technology for extremely low rDS(on). High power and current handling capability in a widely used surface mount package. Fast switching speed. 100% UIL Tested. RoHS Compliant This P-Channel MO.

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FDC3535-like datasheet

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