FDC3535
Overview
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
