PMGD8000LN Datasheet | NXP Semiconductors

Description Dual N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. Product availability: PMGD8000LN in SOT363 (SC-88). 2. Features s s s s Trench MOS™ technology Very fast switching Logic level patible Subminiature surface mount package. 3. Applications s Battery management s High-speed switch s Low power DC-to-DC converter. 4. Pinning information Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1) 1 Top view 2 3 MSA370 Simplified outline 6 5 4 Symbol d1 d2 s1 g1 s2 g2 MSD901 SOT363 (SC-88) Philips Semiconductors .. Dual µTrench MOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj 150 °C Tamb = 25 °C; VGS = 4 V Tamb = 25 °C VGS = 4 V; ID = 10 m A VGS = 2.5 V; ID = 1 m A Typ 1.8 2.9 Max 30 125 0.2 150 8 13 Unit V m A W °C Ω Ω drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tamb = 25 °C Tamb = 25 °C; VGS = 4 V; Figure 2 and 3 Tamb = 70 °C; VGS = 4 V; Figure 2 Tamb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tamb = 25 °C; Figure 1 Conditions 25 °C ≤ Tj 150 °C Min - 55 - 55 Max 30 ±15 125 100 250 0.2 +150 +150 125 Unit V V m A m A m A W °C °C m A Source-drain diode 9397 750 10939 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 - 27 February 2003 2 of 12 Philips Semiconductors .. Dual µTrench MOS™ logic level FET 120 Pder (%) 80 03aa11 120 Ider (%)...