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PMGD8000LN Datasheet

Dual UTrenchMOS logic level FET

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PMGD8000LN
Dual µTrenchMOS™ logic level FET
Rev. 01 — 27 February 2003
MBD128
www.DataSheet4U.com
Product data
1. Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMGD8000LN in SOT363 (SC-88).
2. Features
s TrenchMOS™ technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.
3. Applications
s Battery management
s High-speed switch
s Low power DC-to-DC converter.
4. Pinning information
Table 1: Pinning - SOT363 (SC-88), simplified outline and symbol
Pin Description
Simplified outline
1 source (s1)
2 gate (g1)
6 54
3 drain (d2)
4 source (s2)
5 gate (g2)
6 drain (d1)
1 23
Top view
MSA370
SOT363 (SC-88)
Symbol
d1 d2
s1 g1 s2 g2
MSD901


NXP Semiconductors Electronic Components Datasheet

PMGD8000LN Datasheet

Dual UTrenchMOS logic level FET

No Preview Available !

Philips Semiconductors
PMGD8000LN
Dual µTrenchMwOwSw.DalotagSihceelet4vUe.lcoFmET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C Tj 150 °C
Tamb = 25 °C; VGS = 4 V
Tamb = 25 °C
VGS = 4 V; ID = 10 mA
VGS = 2.5 V; ID = 1 mA
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
Tamb = 25 °C; VGS = 4 V; Figure 2 and 3
Tamb = 70 °C; VGS = 4 V; Figure 2
Tamb = 25 °C; pulsed; tp 10 µs; Figure 3
Tamb = 25 °C; Figure 1
IS source (diode forward) current (DC) Tamb = 25 °C
Typ Max Unit
- 30 V
- 125 mA
- 0.2 W
- 150 °C
1.8 8
2.9 13
Min Max Unit
- 30 V
- ±15 V
- 125 mA
- 100 mA
- 250 mA
- 0.2 W
55 +150 °C
55 +150 °C
- 125 mA
9397 750 10939
Product data
Rev. 01 — 27 February 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
2 of 12


Part Number PMGD8000LN
Description Dual UTrenchMOS logic level FET
Maker NXP Semiconductors
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