Click to expand full text
www.DataSheet4U.com
PMG370XN
N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev. 01 — 13 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 0.69 W s ID ≤ 0.96 A s RDSon ≤ 440 mΩ.
2.
PMG370XN Datasheet
