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TS SO P6
PMG85XP
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 28 June 2011 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tj = 25 °C VGS = -4.
PMG85XP Datasheet
