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PMGD780SN
Dual N-channel µTrenchMOS™ standard level FET
MBD128
Rev. 01 — 11 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Standard level threshold voltage s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Dual device.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 60 V s Ptot ≤ 0.41 W s ID ≤ 0.49 A s RDSon ≤ 920 mΩ.
2.
PMGD780SN Datasheet
