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PMGD290XN
Dual N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev. 01 — 26 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 0.41 W s ID ≤ 0.86 A s RDSon ≤ 350 mΩ.
2.
PMGD290XN Datasheet
