PBHV8560Z transistor equivalent, 0.5 a npn high-voltage low vcesat (biss) transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability
* High collector current gain hFE at high IC
* AEC-Q101 qualified
3.
* Electronic ballast for fluorescent lighting
* LED driver for LED chain module
* LCD backlighting
* Hig.
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9560Z
2. Features and benefits
* Low collector-emitter saturation volta.
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