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PBHV8540X Datasheet Preview

PBHV8540X Datasheet

NPN Transistor

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PBHV8540X
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
5 December 2013
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040X.
2. Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCESM
VCEO
IC
hFE
Quick reference data
Parameter
Conditions
collector-emitter peak VBE = 0 V
voltage
collector-emitter
voltage
open base
collector current
DC current gain
VCE = 10 V; IC = 50 mA; Tamb = 25 °C
Min Typ Max Unit
- - 500 V
- - 400 V
- - 0.5
100 200 -
A
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nexperia

PBHV8540X Datasheet Preview

PBHV8540X Datasheet

NPN Transistor

No Preview Available !

NXP Semiconductors
PBHV8540X
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 E emitter
2 C collector
3 B base
Simplified outline
321
SOT89
Graphic symbol
2
3
1
sym042
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV8540X
SOT89
Description
Version
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4. Marking codes
Type number
PBHV8540X
Marking code
[1]
%4D
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VCESM
collector-emitter peak voltage VBE = 0 V
VEBO
emitter-base voltage
open collector
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IBM peak base current
Ptot
total power dissipation
Tamb ≤ 25 °C
PBHV8540X
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 December 2013
Min Max Unit
- 500 V
- 400 V
- 500 V
- 6V
- 0.5 A
- 1A
- 200 mA
[1] -
0.52 W
© NXP N.V. 2013. All rights reserved
2 / 14


Part Number PBHV8540X
Description NPN Transistor
Maker nexperia
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PBHV8540X Datasheet PDF






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