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PBHV8540Z Datasheet, NXP Semiconductors

PBHV8540Z transistor equivalent, 0.5a npn high-voltage low vcesat(biss) transistor.

PBHV8540Z Avg. rating / M : 1.0 rating-11

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PBHV8540Z Datasheet

Features and benefits

I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 .

Application

I I I I I I I www.DataSheet4U.com Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backli.

Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z. 1.2 Features I I I I I High voltage Low collector-emitter saturation.

Image gallery

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TAGS

PBHV8540Z
0.5A
NPN
high-voltage
low
VCEsatBISS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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