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BLS6G2731-6G Datasheet, NXP Semiconductors

BLS6G2731-6G transistor equivalent, ldmos s-band radar power transistor.

BLS6G2731-6G Avg. rating / M : 1.0 rating-11

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BLS6G2731-6G Datasheet

Features and benefits

I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Po.

Application

in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = .

Description

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of opera.

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TAGS

BLS6G2731-6G
LDMOS
S-Band
radar
power
transistor
BLS6G2731-120
BLS6G2731S-120
BLS6G2731S-130
NXP Semiconductors

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