Datasheet Summary
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BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01
- 14 November 2008 Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 120 Gp (dB) 13.5 ηD (%) 48 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical pulsed RF...
