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BLS6G2731S-120 Datasheet, NXP

BLS6G2731S-120 transistor equivalent, ldmos s-band radar power transistor.

BLS6G2731S-120 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 112.86KB)

BLS6G2731S-120 Datasheet
BLS6G2731S-120
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 112.86KB)

BLS6G2731S-120 Datasheet

Features and benefits

I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N .

Application

in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = .

Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of op.

Image gallery

BLS6G2731S-120 Page 1 BLS6G2731S-120 Page 2 BLS6G2731S-120 Page 3

TAGS

BLS6G2731S-120
LDMOS
S-band
Radar
Power
Transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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