Datasheet Details
| Part number | BLS6G2731S-120 |
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| Manufacturer | NXP Semiconductors |
| File Size | 112.86 KB |
| Description | LDMOS S-band Radar Power Transistor |
| Datasheet |
 BLS6G2731S-120 Datasheet
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General Description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Key Features
- I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.