BLS6G2731S-130 - LDMOS S-band radar power transistor

Description

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

• Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 130 W ‹ Power gain = 12.5 dB ‹ Efficiency = 47 %.
• Easy power control.
• Integrated ESD protection.
• High flexibility with respect to pulse formats.
• Excellent ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for broadband operation (2.7 GHz to 3.1 GHz).