BLS6G2731-6G - LDMOS S-Band radar power transistor

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB production test circuit.

• Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:.
• Output power = 6 W.
• Power gain = 15 dB.
• Efficiency = 3.