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* Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7.

in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C.

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF puls.

BLS6G2735LS-30

BLS6G2731-120

BLS6G2731-6G

BLS6G2731S-120

BLS6G2731S-130

BLS6G2933P-200

BLS6G2933S-130

BLS6G3135-120

BLS6G3135-20

BLS6G3135S-120

BLS6G3135S-20

BLS65R165

BLS2731-10

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