Download the BLS6G2735LS-30 datasheet PDF.
This datasheet also covers the BLS6G2735L-30 variant, as both devices belong to the same s-band ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.
Full PDF Text Transcription for BLS6G2735LS-30 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BLS6G2735LS-30. For precise diagrams, and layout, please refer to the original PDF.
BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor ...
View more extracted text
. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 50 mA. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) tr (ns) tf (ns) Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz pulsed RF 3.1 to 3.5 32 30 13 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz pulsed RF 2.7 to 3.3 32 35 14 50 20 10 Typical RF performance in an application circuit in small
BLS6G2735LS-30 Datasheet
