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BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit.
Mode of operation
f (GHz)
VDS PL (V) (W)
Gp D (dB) (%)
tr (ns)
tf (ns)
pulsed RF
2.7 to 3.1 32
6
15 33
20
10
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. You must use a ground strap or touch the PC case or other grounded source before unpacking or handling the hardware.
1.
BLS6G2731-6G Datasheet
