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BLS6G2735LS-30 - S-band LDMOS transistor

Download the BLS6G2735LS-30 datasheet PDF. This datasheet also covers the BLS6G2735L-30 variant, as both devices belong to the same s-band ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Table 1.

Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.

Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLS6G2735L-30-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLS6G2735LS-30
Manufacturer Ampleon
File Size 553.42 KB
Description S-band LDMOS transistor
Datasheet download datasheet BLS6G2735LS-30 Datasheet

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Full PDF Text Transcription

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BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f VDS PL Gp D (GHz) (V) (W) (dB) (%) tr (ns) tf (ns) Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz pulsed RF 3.1 to 3.5 32 30 13 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz pulsed RF 2.7 to 3.3 32 35 14 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz pulsed RF 2.7 to 3.
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