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BLS6G2735LS-30 - S-band LDMOS transistor

Download the BLS6G2735LS-30 datasheet PDF. This datasheet also covers the BLS6G2735L-30 variant, as both devices belong to the same s-band ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Table 1.

Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.

Features

  • Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Note: The manufacturer provides a single datasheet file (BLS6G2735L-30-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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BLS6G2735L-30 S-band LDMOS transistor
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Full PDF Text Transcription

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BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 VDS (V) 32 32 32 PL (W) 30 35 30 Gp (dB) 13 14 12 D (%) 50 50 47 tr (ns) 20 20 20 tf (ns) 10 10 10 Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz 1.
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