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PMPB10XNE Datasheet

single N-channel Trench MOSFET

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PMPB10XNE
20 V, single N-channel Trench MOSFET
30 November 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
2.2 kV ESD protection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated, 100% solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 12.9 A
- 10 14 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors Electronic Components Datasheet

PMPB10XNE Datasheet

single N-channel Trench MOSFET

No Preview Available !

NXP Semiconductors
PMPB10XNE
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
Simplified outline
Graphic symbol
16
7
25
384
Transparent top view
DFN2020MD-6 (SOT1220)
G
D
S
017aaa255
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB10XNE
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1220
4. Marking
Table 4. Marking codes
Type number
PMPB10XNE
Marking code
1H
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB10XNE
All information provided in this document is subject to legal disclaimers.
Product data sheet
30 November 2012
[1]
[1]
[1]
[1]
Min Max Unit
- 20 V
-12 12
V
- 12.9 A
- 9A
- 5.7 A
- 36 A
- 1.7 W
© NXP B.V. 2012. All rights reserved
2 / 14


Part Number PMPB10XNE
Description single N-channel Trench MOSFET
Maker NXP
Total Page 14 Pages
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