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PBSS8110T - NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS9110T.

MARKING TYPE NUMBER PBSS8110T Note 1.

DESCRIPTION plastic surface mounted pac

Key Features

  • SOT23 package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jul 28 2003 Dec 22 Philips Semiconductors Product specification 100 V, 1 A NPN low VCEsat (BISS) transistor FEATURES • SOT23 package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g.