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NXP Semiconductors Electronic Components Datasheet

PBSS8110T Datasheet

NPN low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBSS8110T
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Jul 28
2003 Dec 22


NXP Semiconductors Electronic Components Datasheet

PBSS8110T Datasheet

NPN low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
PBSS8110T
FEATURES
SOT23 package
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.
APPLICATIONS
Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
RCEsat
equivalent on-resistance
MAX. UNIT
100 V
1A
3A
200 m
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
handbook, halfpage
3
1
Top view
1
2
MAM255
3
2
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE NUMBER
PBSS8110T
MARKING CODE(1)
*U8
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS8110T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2003 Dec 22
2


Part Number PBSS8110T
Description NPN low VCEsat (BISS) transistor
Maker NXP
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PBSS8110T Datasheet PDF






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