Philips Semiconductors
100 V, 1 A
NPN low VCEsat (BISS) transistor
Product specification
PBSS8110T
FEATURES
• SOT23 package
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
RCEsat
equivalent on-resistance
MAX. UNIT
100 V
1A
3A
200 mΩ
PINNING
PIN
1
2
3
DESCRIPTION
base
emitter
collector
handbook, halfpage
3
1
Top view
1
2
MAM255
3
2
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE NUMBER
PBSS8110T
MARKING CODE(1)
*U8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS8110T
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2003 Dec 22
2
