PBSS305ND transistor equivalent, 3a npn transistor.
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to .
I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage po.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS305PD.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector cu.
Image gallery
TAGS
Download (Size : 145.65KB)