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PBSS305PD Datasheet, NXP

PBSS305PD transistor equivalent, pnp transistor.

PBSS305PD Avg. rating / M : 1.0 rating-11

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PBSS305PD Datasheet

Features and benefits

I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to .

Application

I I I I I I High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage po.

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305ND. 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector cu.

Image gallery

PBSS305PD Page 1 PBSS305PD Page 2 PBSS305PD Page 3

TAGS

PBSS305PD
PNP
Transistor
PBSS305PX
PBSS305PZ
PBSS305ND
NXP

Manufacturer


NXP (https://www.nxp.com/)

Related datasheet

PBSS305PD

PBSS305PX

PBSS305PZ

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