isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications · Suitable for use

Complementary NPN‐PNP Power Bipolar Transistors NJW0281G (NPN), NJW0302G (PNP) These complementary devices are lower power versions of the popular NJ

2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Max

PNP Power Transistor Complementary Silicon Plastic Power Transistors Features: Designed for use in general purpose power amplifier and switching appl

PNP POWER TRANSISTORS COMPLEMENTARY TO THE 0400 SERIES 0410 Series -30 - -60 VOLTS -1 AMP, 6.25 WATTS The General Electric 0410 is a power transisto

isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Large Current Capabili

TO-92 Plastic-Encapsulate Transistors 2SA1273 TRANSISTOR (PNP) FEATURES Complementary to KTC3205. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) S

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

2SA1020 One Watt High Current PNP Transistor Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Vo

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD366 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Excellent Safe

Назначение КТ837 биполярный эпитаксиально-планарный p-n-p транзистор Предназначен для применения в схемах переключения, выходных каскадах низкочасто

Shenzhen Jingdao Electronic Co.,Ltd. B647 PNP Power Transistor *Applications ： ◆ Electronical Ballasts for fluorescent lighting ◆ Charger and Switch

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • Low Collector saturati

2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap

A940 PNP Epitaxial Silicon Transistor TO-220 VERTICAL DEFLECTION OUTPUT POWER AMPLIFIER Complement to C2073 Collector-Emitter Voltage: VCEO=-150V Co

www.DataSheet4U.com PDF processed with CutePDF evaluation edition www.CutePDF.com www.DataSheet4U.com