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PBSS301ND - 4A NPN transistor

General Description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package.

PNP complement: PBSS301PD.

Key Features

  • s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation 1.3.

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www.DataSheet4U.com PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 — 25 April 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD. 1.2 Features s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High efficiency due to less heat generation 1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.