PBSS305NX transistor equivalent, 4.6a npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.
* High-voltage DC-to-DC conversion
* High-voltage MOSFET gate driving
* High-voltage motor control
* Hig.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PX.
1.2 Features
* Low collector-emitter saturation voltage VCEsat <.
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