PBSS302NX transistor equivalent, 5.3a npn transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.
* DC-to-DC conversion
* MOSFET gate driving
* Motor control
* Charging circuits
* Power switches (e..
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PX.
1.2 Features
* Low collector-emitter saturation voltage VCEsat <.
Image gallery
TAGS
Download (Size : 173.79KB)