* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High eff.

* DC-to-DC conversion
* MOSFET gate driving
* Motor control
* Charging circuits
* Power switches (e..

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX. 1.2 Features
* Low collector-emitter saturation voltage VCEsat <.

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