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BLF184XR - Power LDMOS transistor

Description

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Full PDF Text Transcription

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BLF184XR; BLF184XRS Power LDMOS transistor Rev. 3 — 1 April 2014 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 108 VDS PL (V) (W) 50 700 50 750 Gp (dB) 23.9 23.5 D (%) 73.5 81.9 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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