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BLF182XRS Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

Download the BLF182XRS datasheet PDF. This datasheet also includes the BLF182XR variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BLF182XR-NXP.pdf) that lists specifications for multiple related part numbers.

General Description

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 250 Gp (dB) 28 D (%) 72 1.2

Overview

BLF182XR; BLF182XRS Power LDMOS transistor Rev.

1 — 23 July 2015 Objective data sheet 1.

Product profile 1.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📁 Similar Datasheet

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