Datasheet4U Logo Datasheet4U.com

BLF1820-70 Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS.

📥 Download Datasheet

General Description

1 3 MBK394 APPLICATIONS • RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Key Features

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA:.
  • Output power = 65 W (PEP).
  • Gain = 12 dB.
  • Efficiency = 32%.
  • dim =.
  • 26 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (1800 to 2000 MHz).
  • Internally matched for ease of use. Top view 2 handbook, halfpage BLF1820-70.

More Datasheets from NXP Semiconductors

Part Number Description
BLF182XR Power LDMOS transistor
BLF182XRS Power LDMOS transistor
BLF183XR Power LDMOS transistor
BLF183XRS Power LDMOS transistor
BLF184XR Power LDMOS transistor
BLF184XRG Power LDMOS transistor
BLF184XRS Power LDMOS transistor
BLF188XR Power LDMOS transistor
BLF188XRG Power LDMOS transistor
BLF188XRS Power LDMOS transistor