BLF182XR Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

Datasheet Details

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Application information Test signal f (MHz) pulsed RF 108 VDS PL (V) (W) 50 250 Gp (dB) 28 D (%) 72 1.2

BLF182XR; BLF182XRS Power LDMOS transistor Rev.

1 — 23 July 2015 Objective data sheet 1.

Product profile 1.

Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (HF to 600 MHz).
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Part Number	Description	Manufacturer
BLF182XR	Power LDMOS transistor	Ampleon
BLF182XRS	Power LDMOS transistor	Ampleon
BLF1820-40	UHF power LDMOS transistor	Philips
BLF1820-90	UHF power LDMOS transistor	Philips