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NCE80H11H Datasheet, NCE Power Semiconductor

NCE80H11H mosfet equivalent, n-channel enhancement mode power mosfet.

NCE80H11H Avg. rating / M : 1.0 rating-11

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NCE80H11H Datasheet

Features and benefits


* VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.

Application

General Features
* VDS =80V,ID =105A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.8mΩ)
* High density cell design for ul.

Image gallery

NCE80H11H Page 1 NCE80H11H Page 2 NCE80H11H Page 3

TAGS
NCE80H11H
N-Channel
Enhancement
Mode
Power
MOSFET
NCE80H11
NCE80H11D
NCE80H12
NCE Power Semiconductor
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