NCE80H12 mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and curr.
GENERAL FEATURES
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* High density cell design for.
The NCE80H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
* VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
Schematic diagram
* Hi.
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